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InAs/Al0.2Ga0.8Sb quantum well Hall sensors with improved temperature stability

dc.contributor.authorBekaert, Joost
dc.contributor.authorMoshchalkov, V. V.
dc.contributor.authorBruynseraede, Y.
dc.contributor.authorBehet, Markus
dc.contributor.authorDe Boeck, Jo
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-06T10:42:16Z
dc.date.available2021-10-06T10:42:16Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3223
dc.sourceIIOimport
dc.titleInAs/Al0.2Ga0.8Sb quantum well Hall sensors with improved temperature stability
dc.typeJournal article
dc.contributor.imecauthorBekaert, Joost
dc.contributor.imecauthorDe Boeck, Jo
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecBekaert, Joost::0000-0003-3075-3479
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2715
dc.source.endpage2718
dc.source.journalReview of Scientific Instruments
dc.source.issue6
dc.source.volume70
imec.availabilityPublished - open access


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