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Electric field modified Arrhenius description of charge transport in amorphous oxide semiconductor thin film transistors

dc.contributor.authorWang, Wei
dc.contributor.authorXu, Guangwei
dc.contributor.authorChowdhury, M. Delwar H.
dc.contributor.authorWang, Hong
dc.contributor.authorUm, Jae Kwang
dc.contributor.authorJi, Zhuoyu
dc.contributor.authorGao, Nan
dc.contributor.authorZong, Zhiwei
dc.contributor.authorBi, Chong
dc.contributor.authorLu, Congyan
dc.contributor.authorLu, Nianduan
dc.contributor.authorBanerjee, Writam
dc.contributor.authorFeng, Jiafeng
dc.contributor.authorLi, Ling
dc.contributor.authorKadashchuk, Andriy
dc.contributor.authorJang, Jin
dc.contributor.authorLiu, Ming
dc.date.accessioned2021-10-26T09:11:17Z
dc.date.available2021-10-26T09:11:17Z
dc.date.issued2018
dc.identifier.issn1098-0121
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32248
dc.sourceIIOimport
dc.titleElectric field modified Arrhenius description of charge transport in amorphous oxide semiconductor thin film transistors
dc.typeJournal article
dc.contributor.imecauthorZong, Zhiwei
dc.contributor.imecauthorKadashchuk, Andriy
dc.contributor.orcidimecZong, Zhiwei::0000-0001-6748-2153
dc.identifier.doi10.1103/PhysRevB.98.245308
dc.source.peerreviewyes
dc.source.beginpage245308
dc.source.journalPhysical Review B
dc.source.volume98
imec.availabilityPublished - imec


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