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Influence of GaN- and Si3N4- passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination

dc.contributor.authorAcurio Mendez, Eliana
dc.contributor.authorCrupi, Felice
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorTrojman, Lionel
dc.date.accessioned2021-10-27T07:25:04Z
dc.date.available2021-10-27T07:25:04Z
dc.date.issued2019
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32403
dc.sourceIIOimport
dc.titleInfluence of GaN- and Si3N4- passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination
dc.typeJournal article
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage883
dc.source.endpage889
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue2
dc.source.volume66
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8599127
imec.availabilityPublished - imec


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