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Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures

dc.contributor.authorBoeve, Hans
dc.contributor.authorBruynseraede, Christophe
dc.contributor.authorDas, J.
dc.contributor.authorDessein, Kristof
dc.contributor.authorBorghs, Gustaaf
dc.contributor.authorDe Boeck, Jo
dc.contributor.authorSousa, R. C.
dc.contributor.authorMelo, Luis
dc.contributor.authorFreitas, P. P.
dc.date.accessioned2021-10-06T10:43:51Z
dc.date.available2021-10-06T10:43:51Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3248
dc.sourceIIOimport
dc.titleTechnology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures
dc.typeJournal article
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.imecauthorDe Boeck, Jo
dc.source.peerreviewno
dc.source.beginpage2820
dc.source.endpage2825
dc.source.journalIEEE Trans. Magnetics
dc.source.issue5
dc.source.volume35
imec.availabilityPublished - imec


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