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Integration of spin valves and GaAs diodes in magnetoresistive random access memory cells

dc.contributor.authorBoeve, Hans
dc.contributor.authorDas, J.
dc.contributor.authorBruynseraede, Christophe
dc.contributor.authorDe Boeck, Jo
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-06T10:43:59Z
dc.date.available2021-10-06T10:43:59Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3250
dc.sourceIIOimport
dc.titleIntegration of spin valves and GaAs diodes in magnetoresistive random access memory cells
dc.typeJournal article
dc.contributor.imecauthorDe Boeck, Jo
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.beginpage4779
dc.source.endpage4781
dc.source.journalJ. Applied Physics
dc.source.issue8
dc.source.volume85
imec.availabilityPublished - imec


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