Show simple item record

Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE

dc.contributor.authorBougrioua, Zahia
dc.contributor.authorFarvacque, J. L.
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorDemeester, Piet
dc.contributor.authorHarris, J. J.
dc.contributor.authorLee, K.
dc.contributor.authorVan Tendeloo, G.
dc.contributor.authorLebedev, O.
dc.contributor.authorThrush, E. J.
dc.date.accessioned2021-10-06T10:44:37Z
dc.date.available2021-10-06T10:44:37Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3259
dc.sourceIIOimport
dc.titleMobility collapse in undoped and Si-doped GaN grown by LP-MOVPE
dc.typeJournal article
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage571
dc.source.endpage576
dc.source.journalPhysica Status Solidi B
dc.source.issue1
dc.source.volume216
imec.availabilityPublished - open access


Files in this item

Thumbnail
Name:
3221.pdf
Size:
340.8Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record