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Electronic transport properties of polycrystalline silicon films deposited on ceramic substrates

dc.contributor.authorBourdais, S.
dc.contributor.authorBeaucarne, Guy
dc.contributor.authorPoortmans, Jef
dc.contributor.authorSlaoui, A.
dc.date.accessioned2021-10-06T10:45:07Z
dc.date.available2021-10-06T10:45:07Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3265
dc.sourceIIOimport
dc.titleElectronic transport properties of polycrystalline silicon films deposited on ceramic substrates
dc.typeJournal article
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewno
dc.source.beginpage544
dc.source.endpage548
dc.source.journalPhysica B
dc.source.volume274
imec.availabilityPublished - imec
imec.internalnotesInternational Conference on Defects in Semiconductors; July 1999; San Francisco, CA, USA


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