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Photoresist challenges for logic and memory using 0.33NA EUV lithography

dc.contributor.authorDe Simone, Danilo
dc.contributor.authorVandenberghe, Geert
dc.date.accessioned2021-10-27T08:33:48Z
dc.date.available2021-10-27T08:33:48Z
dc.date.issued2019
dc.identifier.issn0914-9244
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32836
dc.sourceIIOimport
dc.titlePhotoresist challenges for logic and memory using 0.33NA EUV lithography
dc.typeJournal article
dc.contributor.imecauthorDe Simone, Danilo
dc.contributor.imecauthorVandenberghe, Geert
dc.contributor.orcidimecDe Simone, Danilo::0000-0003-3927-5207
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage87
dc.source.endpage91
dc.source.journalJournal of Photopolymer Science and Technology
dc.source.issue1
dc.source.volume32
dc.identifier.urlhttps://doi.org/10.2494/photopolymer.32.87
imec.availabilityPublished - open access
imec.internalnotesPaper from: 36th International Conference of Photopolymer Science and Technology, June 2019, Chiba, Japan


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