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Pulsed-laser induced single-event transients in InGaAs FinFETs on bulk silicon substrates

dc.contributor.authorGong, H.
dc.contributor.authorNi, K.
dc.contributor.authorZhang, E.X.
dc.contributor.authorSternberg, A. L.
dc.contributor.authorKuzub, J.A.
dc.contributor.authorAlles, M.L.
dc.contributor.authorReed, R.
dc.contributor.authorFleetwood, D.
dc.contributor.authorSchrimpf, R.
dc.contributor.authorWaldron, Niamh
dc.contributor.authorKunert, Bernardette
dc.contributor.authorLinten, Dimitri
dc.date.accessioned2021-10-27T09:42:20Z
dc.date.available2021-10-27T09:42:20Z
dc.date.issued2019
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33042
dc.sourceIIOimport
dc.titlePulsed-laser induced single-event transients in InGaAs FinFETs on bulk silicon substrates
dc.typeJournal article
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage376
dc.source.endpage383
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.issue1
dc.source.volume66
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8532366
imec.availabilityPublished - open access


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