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Effect of the Ge-molefraction on the subthreshold slope and leakage current of vertical Si/Si1-xGex MOSFETs

dc.contributor.authorCollaert, Nadine
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-06T10:49:12Z
dc.date.available2021-10-06T10:49:12Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3307
dc.sourceIIOimport
dc.titleEffect of the Ge-molefraction on the subthreshold slope and leakage current of vertical Si/Si1-xGex MOSFETs
dc.typeJournal article
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2173
dc.source.endpage2180
dc.source.journalSolid-State Electronics
dc.source.issue12
dc.source.volume43
imec.availabilityPublished - open access


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