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Ab initio treatment of silicon-hydrogen bond rupture at Si/SiO2 interfaces

dc.contributor.authorJech, Markus
dc.contributor.authorEl-Sayed, Al-Moatasem
dc.contributor.authorTyaginov, Stanislav
dc.contributor.authorShluger, Alexander L
dc.contributor.authorGrasser, Tibor
dc.date.accessioned2021-10-27T10:55:01Z
dc.date.available2021-10-27T10:55:01Z
dc.date.issued2019
dc.identifier.issn1098-0121
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33220
dc.sourceIIOimport
dc.titleAb initio treatment of silicon-hydrogen bond rupture at Si/SiO2 interfaces
dc.typeJournal article
dc.contributor.imecauthorTyaginov, Stanislav
dc.source.peerreviewyes
dc.source.beginpage195302
dc.source.journalPhysical Review B
dc.source.issue19
dc.source.volume100
dc.identifier.urlhttps://doi.org/10.1103/PhysRevB.100.195302
imec.availabilityPublished - imec


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