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Advantages of high vacuum for electrical scanning probe microscopy

dc.contributor.authorLudwig, Jonathan
dc.contributor.authorMascaro, Marco
dc.contributor.authorCelano, Umberto
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorParedis, Kristof
dc.date.accessioned2021-10-27T13:01:36Z
dc.date.available2021-10-27T13:01:36Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33482
dc.sourceIIOimport
dc.titleAdvantages of high vacuum for electrical scanning probe microscopy
dc.typeJournal article
dc.contributor.imecauthorLudwig, Jonathan
dc.contributor.imecauthorMascaro, Marco
dc.contributor.imecauthorCelano, Umberto
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorParedis, Kristof
dc.contributor.orcidimecCelano, Umberto::0000-0002-2856-3847
dc.contributor.orcidimecParedis, Kristof::0000-0002-5163-4164
dc.source.peerreviewno
dc.source.beginpageJune 6th
dc.source.journalCompound Semiconductor
dc.identifier.urlhttps://compoundsemiconductor.net/article/107568/Advantages_of_High_Vacuum_for_Electrical_Scanning_Probe_Microscopy
imec.availabilityPublished - imec
imec.internalnotesNews article on website


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