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dc.contributor.authorMa, Jigang
dc.contributor.authorChai, Zheng
dc.contributor.authorZhang, Wei Dong
dc.contributor.authorZhang, Jian Fu
dc.contributor.authorMarsland, John
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGoux, Ludovic
dc.contributor.authorKar, Gouri Sankar
dc.date.accessioned2021-10-27T13:04:19Z
dc.date.available2021-10-27T13:04:19Z
dc.date.issued2019
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33487
dc.sourceIIOimport
dc.titleTDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device
dc.typeJournal article
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage777
dc.source.endpage784
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue1
dc.source.volume66
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8556052
imec.availabilityPublished - open access


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