dc.contributor.author | Ma, Jigang | |
dc.contributor.author | Chai, Zheng | |
dc.contributor.author | Zhang, Wei Dong | |
dc.contributor.author | Zhang, Jian Fu | |
dc.contributor.author | Marsland, John | |
dc.contributor.author | Govoreanu, Bogdan | |
dc.contributor.author | Degraeve, Robin | |
dc.contributor.author | Goux, Ludovic | |
dc.contributor.author | Kar, Gouri Sankar | |
dc.date.accessioned | 2021-10-27T13:04:19Z | |
dc.date.available | 2021-10-27T13:04:19Z | |
dc.date.issued | 2019 | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/33487 | |
dc.source | IIOimport | |
dc.title | TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device | |
dc.type | Journal article | |
dc.contributor.imecauthor | Govoreanu, Bogdan | |
dc.contributor.imecauthor | Degraeve, Robin | |
dc.contributor.imecauthor | Goux, Ludovic | |
dc.contributor.imecauthor | Kar, Gouri Sankar | |
dc.contributor.orcidimec | Goux, Ludovic::0000-0002-1276-2278 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 777 | |
dc.source.endpage | 784 | |
dc.source.journal | IEEE Transactions on Electron Devices | |
dc.source.issue | 1 | |
dc.source.volume | 66 | |
dc.identifier.url | https://ieeexplore.ieee.org/document/8556052 | |
imec.availability | Published - open access | |