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Structural analysis and resistivity measurements of InAs and GaSb fins on 300 mm Si for vertical (T)FET

dc.contributor.authorMols, Yves
dc.contributor.authorBogdanowicz, Janusz
dc.contributor.authorFavia, Paola
dc.contributor.authorLagrain, Pieter
dc.contributor.authorGuo, Weiming
dc.contributor.authorBender, Hugo
dc.contributor.authorKunert, Bernardette
dc.date.accessioned2021-10-27T14:15:28Z
dc.date.available2021-10-27T14:15:28Z
dc.date.issued2019
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33615
dc.sourceIIOimport
dc.titleStructural analysis and resistivity measurements of InAs and GaSb fins on 300 mm Si for vertical (T)FET
dc.typeJournal article
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorBogdanowicz, Janusz
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorLagrain, Pieter
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.orcidimecBogdanowicz, Janusz::0000-0002-7503-8922
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecLagrain, Pieter::0000-0003-3734-7203
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.source.peerreviewyes
dc.source.beginpage245107-1
dc.source.endpage245107-10
dc.source.journalJournal of Applied Physics
dc.source.issue24
dc.source.volume125
dc.identifier.urlhttps://doi.org/10.1063/1.5096015
imec.availabilityPublished - imec


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