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Contact inspection and resistance - capacitance measurement of Si nanowire with SEM voltage contrast

dc.contributor.authorOhashi, Takeyoshi
dc.contributor.authorHasumi, Kazuhisa
dc.contributor.authorIkota, Masami
dc.contributor.authorLorusso, Gian
dc.contributor.authorMertens, Hans
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-27T14:59:21Z
dc.date.available2021-10-27T14:59:21Z
dc.date.issued2019
dc.identifier.issn1932-5150
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33690
dc.sourceIIOimport
dc.titleContact inspection and resistance - capacitance measurement of Si nanowire with SEM voltage contrast
dc.typeJournal article
dc.contributor.imecauthorLorusso, Gian
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage21205
dc.source.journalJournal of Micro/Nanolithography MEMS and MOEMS
dc.source.issue2
dc.source.volume18
dc.identifier.urlhttps://doi.org/10.1117/1.JMM.18.2.021205
imec.availabilityPublished - imec


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