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Impacts of Ta buffer layer and Cu-Ge-Te composition on the reliability of GeSe-based CBRAM

dc.contributor.authorRadhakrishnan, Janaki
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorDevulder, Wouter
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorHoussa, Michel
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorGoux, Ludovic
dc.date.accessioned2021-10-27T16:36:00Z
dc.date.available2021-10-27T16:36:00Z
dc.date.issued2019
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33847
dc.sourceIIOimport
dc.titleImpacts of Ta buffer layer and Cu-Ge-Te composition on the reliability of GeSe-based CBRAM
dc.typeJournal article
dc.contributor.imecauthorRadhakrishnan, Janaki
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorDevulder, Wouter
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.orcidimecDevulder, Wouter::0000-0002-5156-0177
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage5133
dc.source.endpage5138
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue12
dc.source.volume66
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8902010
imec.availabilityPublished - open access


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