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Stress measurements in Si microelectronics devices using Raman spectroscopy

dc.contributor.authorDe Wolf, Ingrid
dc.date.accessioned2021-10-06T10:59:24Z
dc.date.available2021-10-06T10:59:24Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3386
dc.sourceIIOimport
dc.titleStress measurements in Si microelectronics devices using Raman spectroscopy
dc.typeJournal article
dc.contributor.imecauthorDe Wolf, Ingrid
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage877
dc.source.endpage883
dc.source.journalJournal of Raman Spectroscopy
dc.source.issue10
dc.source.volume30
imec.availabilityPublished - open access


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