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Addendum : Stress measurements in silicon devices through raman spectroscopy: bridging the gap between theory and experiment

dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorAnastassakis, E.
dc.date.accessioned2021-10-06T10:59:32Z
dc.date.available2021-10-06T10:59:32Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3387
dc.sourceIIOimport
dc.titleAddendum : Stress measurements in silicon devices through raman spectroscopy: bridging the gap between theory and experiment
dc.typeJournal article
dc.contributor.imecauthorDe Wolf, Ingrid
dc.source.peerreviewno
dc.source.beginpage7484
dc.source.endpage7485
dc.source.journalJ. Appl. Phys.
dc.source.issue10
dc.source.volume85
imec.availabilityPublished - imec


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