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Ge Devices: a potential candidate for sub-5nm nodes?

dc.contributor.authorSharan, Neha
dc.contributor.authorShaik, Khaja Ahmad
dc.contributor.authorJang, Doyoung
dc.contributor.authorSchuddinck, Pieter
dc.contributor.authorYakimets, Dmitry
dc.contributor.authorGarcia Bardon, Marie
dc.contributor.authorMitard, Jerome
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorBufler, Fabian
dc.contributor.authorEneman, Geert
dc.contributor.authorCollaert, Nadine
dc.contributor.authorParvais, Bertrand
dc.contributor.authorSpessot, Alessio
dc.contributor.authorMocuta, Anda
dc.date.accessioned2021-10-27T18:01:52Z
dc.date.available2021-10-27T18:01:52Z
dc.date.issued2019
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33979
dc.sourceIIOimport
dc.titleGe Devices: a potential candidate for sub-5nm nodes?
dc.typeJournal article
dc.contributor.imecauthorSharan, Neha
dc.contributor.imecauthorJang, Doyoung
dc.contributor.imecauthorSchuddinck, Pieter
dc.contributor.imecauthorYakimets, Dmitry
dc.contributor.imecauthorGarcia Bardon, Marie
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorBufler, Fabian
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecBufler, Fabian::0000-0002-1558-9378
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage4997
dc.source.endpage5002
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue11
dc.source.volume66
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8868097
imec.availabilityPublished - open access


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