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Deep levels in Metal-Oxide-Semiconductor Capacitors Fabricated on n-type In0.53Ga0.47As Lattice Matched to InP Substrates

dc.contributor.authorSimoen, Eddy
dc.contributor.authorHsu, Brent
dc.contributor.authorAlian, AliReza
dc.contributor.authorEl Kazzi, Salim
dc.contributor.authorWang, Chong
dc.contributor.authorOri, Hiroyuki
dc.date.accessioned2021-10-27T18:20:04Z
dc.date.available2021-10-27T18:20:04Z
dc.date.issued2019
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34006
dc.sourceIIOimport
dc.titleDeep levels in Metal-Oxide-Semiconductor Capacitors Fabricated on n-type In0.53Ga0.47As Lattice Matched to InP Substrates
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorHsu, Brent
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorWang, Chong
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecHsu, Brent::0000-0003-0823-6088
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage75024
dc.source.journalSemiconductor Science and Technology
dc.source.issue7
dc.source.volume34
imec.availabilityPublished - open access


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