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A novel silicon heterojunction IBC process flow using partial etching of doped a-Si:H to switch from hole contact to electron contact in situ with efficiencies close to 23%

dc.contributor.authorSivaramakrishnan Radhakrishnan, Hariharsudan
dc.contributor.authorUddin, MD Gius
dc.contributor.authorXu, Menglei
dc.contributor.authorCho, Jinyoun
dc.contributor.authorGhannam, Moustafa
dc.contributor.authorGordon, Ivan
dc.contributor.authorSzlufcik, Jozef
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-27T18:31:47Z
dc.date.available2021-10-27T18:31:47Z
dc.date.issued2019
dc.identifier.issn1062-7995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34023
dc.sourceIIOimport
dc.titleA novel silicon heterojunction IBC process flow using partial etching of doped a-Si:H to switch from hole contact to electron contact in situ with efficiencies close to 23%
dc.typeJournal article
dc.contributor.imecauthorSivaramakrishnan Radhakrishnan, Hariharsudan
dc.contributor.imecauthorCho, Jinyoun
dc.contributor.imecauthorGhannam, Moustafa
dc.contributor.imecauthorGordon, Ivan
dc.contributor.imecauthorSzlufcik, Jozef
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecSivaramakrishnan Radhakrishnan, Hariharsudan::0000-0003-1963-273X
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage959
dc.source.endpage970
dc.source.journalProgress in Photovoltaics Research and Applications
dc.source.issue11
dc.source.volume27
dc.identifier.urlhttps://doi.org/10.1002/pip.3101
imec.availabilityPublished - open access


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