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Threshold Voltage Instability in GaN HEMTs with p-type Gate: Mg Doping Compensation

dc.contributor.authorTallarico, Andrea Natale
dc.contributor.authorStoffels, Steve
dc.contributor.authorPosthuma, Niels
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorSangiorgi, Enrico
dc.contributor.authorFiegna, Claudio
dc.date.accessioned2021-10-27T19:23:40Z
dc.date.available2021-10-27T19:23:40Z
dc.date.issued2019
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34100
dc.sourceIIOimport
dc.titleThreshold Voltage Instability in GaN HEMTs with p-type Gate: Mg Doping Compensation
dc.typeJournal article
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage518
dc.source.endpage521
dc.source.journalIEEE Electron Device Letters
dc.source.issue40
dc.source.volume4
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8636498
imec.availabilityPublished - imec


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