dc.contributor.author | Tallarico, Andrea Natale | |
dc.contributor.author | Stoffels, Steve | |
dc.contributor.author | Posthuma, Niels | |
dc.contributor.author | Decoutere, Stefaan | |
dc.contributor.author | Sangiorgi, Enrico | |
dc.contributor.author | Fiegna, Claudio | |
dc.date.accessioned | 2021-10-27T19:23:40Z | |
dc.date.available | 2021-10-27T19:23:40Z | |
dc.date.issued | 2019 | |
dc.identifier.issn | 0741-3106 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/34100 | |
dc.source | IIOimport | |
dc.title | Threshold Voltage Instability in GaN HEMTs with p-type Gate: Mg Doping Compensation | |
dc.type | Journal article | |
dc.contributor.imecauthor | Stoffels, Steve | |
dc.contributor.imecauthor | Posthuma, Niels | |
dc.contributor.imecauthor | Decoutere, Stefaan | |
dc.contributor.orcidimec | Posthuma, Niels::0000-0002-6029-1909 | |
dc.contributor.orcidimec | Decoutere, Stefaan::0000-0001-6632-6239 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 518 | |
dc.source.endpage | 521 | |
dc.source.journal | IEEE Electron Device Letters | |
dc.source.issue | 40 | |
dc.source.volume | 4 | |
dc.identifier.url | https://ieeexplore.ieee.org/document/8636498 | |
imec.availability | Published - imec | |