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Gate reliability of p-GaN HEMT with gate metal retraction

dc.contributor.authorTallarico, Andrea
dc.contributor.authorStoffels, Steve
dc.contributor.authorPosthuma, Niels
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorSangiorgi, E
dc.contributor.authorFiegna, C
dc.date.accessioned2021-10-27T19:24:22Z
dc.date.available2021-10-27T19:24:22Z
dc.date.issued2019
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34101
dc.sourceIIOimport
dc.titleGate reliability of p-GaN HEMT with gate metal retraction
dc.typeJournal article
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage4829
dc.source.endpage4835
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue11
dc.source.volume66
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8842623
imec.availabilityPublished - imec


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