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Modelling hot carrier degradation of LDD NMOSFETs by using a high resolution measurement technique

dc.contributor.authorDreesen, R.
dc.contributor.authorCroes, Kris
dc.contributor.authorManca, Jean
dc.contributor.authorDe Ceuninck, Ward
dc.contributor.authorDe Schepper, Luc
dc.contributor.authorPergoot, A.
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-06T11:07:09Z
dc.date.available2021-10-06T11:07:09Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3435
dc.sourceIIOimport
dc.titleModelling hot carrier degradation of LDD NMOSFETs by using a high resolution measurement technique
dc.typeJournal article
dc.contributor.imecauthorDe Ceuninck, Ward
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.beginpage785
dc.source.endpage790
dc.source.journalMicroelectronics and Reliability
dc.source.issue6_7
dc.source.volume39
imec.availabilityPublished - imec
imec.internalnotesESREF; October 1999; Bordeaux, France


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