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Impact of in-situ annealing on the deep levels in Ni-Au/AlN/Si MIS Capacitors

dc.contributor.authorWang, Chong
dc.contributor.authorLi, W.
dc.contributor.authorZhao, Ming
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-27T23:12:36Z
dc.date.available2021-10-27T23:12:36Z
dc.date.issued2019
dc.identifier.issn1862-6300
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34418
dc.sourceIIOimport
dc.titleImpact of in-situ annealing on the deep levels in Ni-Au/AlN/Si MIS Capacitors
dc.typeJournal article
dc.contributor.imecauthorWang, Chong
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage1900248-1
dc.source.endpage1900248-5
dc.source.journalPhysica Status Solidi A
dc.source.issue17
dc.source.volume216
dc.identifier.urlhttps://doi.org/10.1002/pssa.201900248
imec.availabilityPublished - imec
imec.internalnotesSpecial Issue: Gettering and Defect Engineering in Semiconductor Technology, September 2019


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