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Hydrogen passivation of newly developed EMC-multcrystalline silicon

dc.contributor.authorEinhaus, Roland
dc.contributor.authorDuerinckx, Filip
dc.contributor.authorVan Kerschaver, R.
dc.contributor.authorSzlufcik, Jozef
dc.contributor.authorDurand, F.
dc.contributor.authorRibeyron, P. J.
dc.contributor.authorDuby, J. C.
dc.contributor.authorSarti, D.
dc.contributor.authorGoaer, G.
dc.contributor.authorLe, G. N.
dc.contributor.authorPerichaud, I.
dc.contributor.authorClerc, L.
dc.contributor.authorMartinuzzi, S.
dc.date.accessioned2021-10-06T11:09:00Z
dc.date.available2021-10-06T11:09:00Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3446
dc.sourceIIOimport
dc.titleHydrogen passivation of newly developed EMC-multcrystalline silicon
dc.typeJournal article
dc.contributor.imecauthorDuerinckx, Filip
dc.contributor.imecauthorSzlufcik, Jozef
dc.contributor.orcidimecDuerinckx, Filip::0000-0003-2570-7371
dc.source.peerreviewno
dc.source.beginpage82
dc.source.endpage85
dc.source.journalMaterials Science and Engineering B
dc.source.issue1_2
dc.source.volume58
imec.availabilityPublished - imec
imec.internalnotesE-MRS 1998 Spring Meeting, Symposium A: Defects in Silicon: Hydrogen. 16-19 June 1998; Strasbourg, France


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