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MoS2/MoTe2 heterostructure tunnel FETs using gated Schottky contacts

dc.contributor.authorBalaji, Yashwanth
dc.contributor.authorSmets, Quentin
dc.contributor.authorSzabo, Aron
dc.contributor.authorMascaro, Marco
dc.contributor.authorLin, Dennis
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorRadu, Iuliana
dc.contributor.authorLuisier, Mathieu
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-28T20:13:45Z
dc.date.available2021-10-28T20:13:45Z
dc.date.issued2020
dc.identifier.issn1616-301X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34690
dc.sourceIIOimport
dc.titleMoS2/MoTe2 heterostructure tunnel FETs using gated Schottky contacts
dc.typeJournal article
dc.contributor.imecauthorBalaji, Yashwanth
dc.contributor.imecauthorSmets, Quentin
dc.contributor.imecauthorMascaro, Marco
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecSmets, Quentin::0000-0002-2356-5915
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.source.peerreviewyes
dc.source.beginpage1905970
dc.source.journalAdvanced Functional Materials
dc.source.issue4
dc.source.volume30
dc.identifier.urlhttps://doi.org/10.1002/adfm.201905970
imec.availabilityPublished - imec


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