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Empirical relationship between the low-frequency noise spectral density and the transconductance of silicon-on-insulator n-channel metal-oxide-semiconductor transistors

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-09-29T12:47:25Z
dc.date.available2021-09-29T12:47:25Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/346
dc.sourceIIOimport
dc.titleEmpirical relationship between the low-frequency noise spectral density and the transconductance of silicon-on-insulator n-channel metal-oxide-semiconductor transistors
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage1946
dc.source.endpage1948
dc.source.journalApplied Physics Letters
dc.source.issue15
dc.source.volume65
imec.availabilityPublished - imec


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