dc.contributor.author | Beckers, Arnout | |
dc.contributor.author | Jaezeri, Farzan | |
dc.contributor.author | Grill, Alexander | |
dc.contributor.author | Narasimhamoorthy, Subramanian | |
dc.contributor.author | Parvais, Bertrand | |
dc.contributor.author | Enz, Christian | |
dc.date.accessioned | 2021-10-28T20:16:33Z | |
dc.date.available | 2021-10-28T20:16:33Z | |
dc.date.issued | 2020 | |
dc.identifier.issn | 2168-6734 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/34720 | |
dc.source | IIOimport | |
dc.title | Physical model of low-temperature to cryogenic threshold voltage in MOSFETs | |
dc.type | Journal article | |
dc.contributor.imecauthor | Beckers, Arnout | |
dc.contributor.imecauthor | Grill, Alexander | |
dc.contributor.imecauthor | Narasimhamoorthy, Subramanian | |
dc.contributor.imecauthor | Parvais, Bertrand | |
dc.contributor.orcidimec | Beckers, Arnout::0000-0003-3663-0824 | |
dc.contributor.orcidimec | Grill, Alexander::0000-0003-1615-1033 | |
dc.contributor.orcidimec | Parvais, Bertrand::0000-0003-0769-7069 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 780 | |
dc.source.endpage | 788 | |
dc.source.journal | IEEE Journal of the Electron Devices Society | |
dc.source.volume | 8 | |
dc.identifier.url | https://ieeexplore.ieee.org/document/9076206 | |
imec.availability | Published - open access | |