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Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications

dc.contributor.authorBorga, Matteo
dc.contributor.authorDe Santi, Carlo
dc.contributor.authorStoffels, Steve
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorLi, Xiangdong
dc.contributor.authorZhao, Ming
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMeneghesso,, Gaudenzio
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorZanoni, Enrico
dc.date.accessioned2021-10-28T20:27:20Z
dc.date.available2021-10-28T20:27:20Z
dc.date.issued2020
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34808
dc.sourceIIOimport
dc.titleModeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications
dc.typeJournal article
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage595
dc.source.endpage599
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue2
dc.source.volume67
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8966597
imec.availabilityPublished - imec


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