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Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices

dc.contributor.authorBorga, Matteo
dc.contributor.authorMukherjee, Kalparupa
dc.contributor.authorDe Santi, Carlo
dc.contributor.authorStoffels, Steve
dc.contributor.authorGeens, Karen
dc.contributor.authorYou, Shuzhen
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.contributor.authorMeneghini, Matteo
dc.date.accessioned2021-10-28T20:27:30Z
dc.date.available2021-10-28T20:27:30Z
dc.date.issued2020
dc.identifier.issn1882-0778
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34809
dc.sourceIIOimport
dc.titleModeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
dc.typeJournal article
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage24006
dc.source.journalApplied Physics Express
dc.source.issue2
dc.source.volume13
dc.identifier.urlhttps://iopscience.iop.org/article/10.35848/1882-0786/ab6ef8
imec.availabilityPublished - imec


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