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dc.contributor.authorBufler, Fabian
dc.contributor.authorJang, Doyoung
dc.contributor.authorHellings, Geert
dc.contributor.authorEneman, Geert
dc.contributor.authorMatagne, Philippe
dc.contributor.authorSpessot, Alessio
dc.contributor.authorNa, Myung Hee
dc.date.accessioned2021-10-28T20:30:23Z
dc.date.available2021-10-28T20:30:23Z
dc.date.issued2020
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34827
dc.sourceIIOimport
dc.titleMonte Carlo comparison of n-type and p-type nanosheets with FinFETs: Effect of the number of sheets
dc.typeJournal article
dc.contributor.imecauthorBufler, Fabian
dc.contributor.imecauthorJang, Doyoung
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorMatagne, Philippe
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorNa, Myung Hee
dc.contributor.orcidimecBufler, Fabian::0000-0002-1558-9378
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.source.peerreviewyes
dc.source.beginpage4701
dc.source.endpage4704
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue11
dc.source.volume67
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9204768
imec.availabilityPublished - imec
imec.internalnotesSpecial Section on ESSDERC 2020


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