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Impact of induced lattice defects on performance degradation of AlGaAs/GaAs p-HEMTs

dc.contributor.authorHakata, T.
dc.contributor.authorOhyama, Hidenori
dc.contributor.authorKuroda, S.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, C.
dc.contributor.authorKudou, T.
dc.contributor.authorKobayashi, K.
dc.contributor.authorNakabayashi, M.
dc.contributor.authorYoneoka, M.
dc.contributor.authorTakami, Y.
dc.contributor.authorSunaga, H.
dc.contributor.authorMiyahara, K.
dc.date.accessioned2021-10-06T11:15:50Z
dc.date.available2021-10-06T11:15:50Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3484
dc.sourceIIOimport
dc.titleImpact of induced lattice defects on performance degradation of AlGaAs/GaAs p-HEMTs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage1034
dc.source.endpage1036
dc.source.journalPhysica B
dc.source.volume274
imec.availabilityPublished - imec
imec.internalnotesPresented at the:20th International Conference on Defects in Semiconductors; 26-30 July 1999; Berkeley, CA, USA


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