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Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage

dc.contributor.authorCavalcoli, Daniela
dc.contributor.authorMinj, Albert
dc.contributor.authorFazio, Maria
dc.contributor.authorCros, Ana
dc.contributor.authorHeuken, Michael
dc.date.accessioned2021-10-28T20:37:36Z
dc.date.available2021-10-28T20:37:36Z
dc.date.issued2020
dc.identifier.issn0169-4332
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34871
dc.sourceIIOimport
dc.titleStrain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage
dc.typeJournal article
dc.contributor.imecauthorMinj, Albert
dc.contributor.orcidimecMinj, Albert::0000-0003-0878-3276
dc.source.peerreviewyes
dc.source.beginpage146016
dc.source.journalApplied Surface Science
dc.source.volume515
dc.identifier.urlhttps://doi.org/10.1016/j.apsusc.2020.146016
imec.availabilityPublished - imec


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