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The influence of AlN nucleation layer on RF transmission loss of GaN buffer on high resistivity Si (111) substrate

dc.contributor.authorChang, Shane
dc.contributor.authorZhao, Ming
dc.contributor.authorSpampinato, Valentina
dc.contributor.authorFranquet, Alexis
dc.contributor.authorChang, liLi
dc.date.accessioned2021-10-28T20:39:08Z
dc.date.available2021-10-28T20:39:08Z
dc.date.issued2020
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34879
dc.sourceIIOimport
dc.titleThe influence of AlN nucleation layer on RF transmission loss of GaN buffer on high resistivity Si (111) substrate
dc.typeJournal article
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorSpampinato, Valentina
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecSpampinato, Valentina::0000-0003-3225-6740
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.source.peerreviewyes
dc.source.beginpage35029
dc.source.journalSemiconductor Science and Technology
dc.source.issue3
dc.source.volume35
dc.identifier.urlhttps://iopscience.iop.org/article/10.1088/1361-6641/ab7149
imec.availabilityPublished - imec


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