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Origin of High Current and Illumination Stress Instability in Self-Aligned a-InGaZnO Thin Film Transistors With Al2O3 as High-κ Gate Dielectric

dc.contributor.authorChien, Yu-Chieh
dc.contributor.authorRamírez, Horacio Londoño
dc.contributor.authorSteudel, Soeren
dc.contributor.authorRolin, Cedric
dc.contributor.authorPendurthi, Ravi
dc.contributor.authorGenoe, Jan
dc.contributor.authorChang, Ting-Chang
dc.contributor.authorNag, Manoj
dc.date.accessioned2021-10-28T20:42:21Z
dc.date.available2021-10-28T20:42:21Z
dc.date.issued2020
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34895
dc.sourceIIOimport
dc.titleOrigin of High Current and Illumination Stress Instability in Self-Aligned a-InGaZnO Thin Film Transistors With Al2O3 as High-κ Gate Dielectric
dc.typeJournal article
dc.contributor.imecauthorSteudel, Soeren
dc.contributor.imecauthorRolin, Cedric
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorNag, Manoj
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecRolin, Cedric::0000-0001-5542-8504
dc.source.peerreviewyes
dc.source.beginpage565
dc.source.endpage568
dc.source.journalIEEE Electron Device Letters
dc.source.issue4
dc.source.volume41
dc.identifier.urlhttps://doi.org/10.1109/LED.2020.2976616
imec.availabilityPublished - imec


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