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dc.contributor.authorClaeys, Cor
dc.contributor.authorHsu, Brent
dc.contributor.authorMols, Yves
dc.contributor.authorKunert, Bernardette
dc.contributor.authorBender, Hugo
dc.contributor.authorSeidel, Felix
dc.contributor.authorCarolan, Patrick
dc.contributor.authorLanger, Robert
dc.contributor.authorMerckling, Clement
dc.contributor.authorAlian, AliReza
dc.contributor.authorWaldron, Niamh
dc.contributor.authorEneman, Geert
dc.contributor.authorCollaert, Nadine
dc.contributor.authorHeyns, Marc
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-28T20:46:14Z
dc.date.available2021-10-28T20:46:14Z
dc.date.issued2020
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34913
dc.sourceIIOimport
dc.titleElectrical activity of extended defects in relaxed InxGa1-xAs hetero-epitaxial layers
dc.typeJournal article
dc.contributor.imecauthorHsu, Brent
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorSeidel, Felix
dc.contributor.imecauthorCarolan, Patrick
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecHsu, Brent::0000-0003-0823-6088
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.contributor.orcidimecCarolan, Patrick::0000-0001-5931-3093
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage33001
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.issue3
dc.source.volume9
dc.identifier.urlhttps://doi.org/10.1149/2162-8777/ab74c7
imec.availabilityPublished - open access


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