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Observation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide nMOSFETs

dc.contributor.authorHenson, W. K.
dc.contributor.authorYang, N.
dc.contributor.authorWortman, J. J.
dc.date.accessioned2021-10-06T11:18:53Z
dc.date.available2021-10-06T11:18:53Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3500
dc.sourceIIOimport
dc.titleObservation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide nMOSFETs
dc.typeJournal article
dc.source.peerreviewno
dc.source.beginpage605
dc.source.endpage607
dc.source.journalIEEE Electron Device Letters
dc.source.issue12
dc.source.volume20
imec.availabilityPublished - imec


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