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Magnetic field imaging and light induced capacitance alteration for failure analysis of Cu-TSV interconnects

dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorJacobs, Kristof J.P.
dc.contributor.authorOrozco, Antonio
dc.date.accessioned2021-10-28T21:09:19Z
dc.date.available2021-10-28T21:09:19Z
dc.date.issued2020
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35010
dc.sourceIIOimport
dc.titleMagnetic field imaging and light induced capacitance alteration for failure analysis of Cu-TSV interconnects
dc.typeJournal article
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.imecauthorJacobs, Kristof J.P.
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.contributor.orcidimecJacobs, Kristof J.P.::0000-0002-1081-3633
dc.source.peerreviewyes
dc.source.beginpage113780
dc.source.journalMicroelectronics Reliability
dc.source.volume114
dc.identifier.urlhttps://doi.org/10.1016/j.microrel.2020.113780
imec.availabilityPublished - imec
imec.internalnotes31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), October 2020


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