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dc.contributor.authorDoevenspeck, Jonas
dc.contributor.authorDegraeve, Robin
dc.contributor.authorFantini, Andrea
dc.contributor.authorDebacker, Peter
dc.contributor.authorVerkest, Diederik
dc.contributor.authorLauwereins, Rudy
dc.contributor.authorDehaene, Wim
dc.date.accessioned2021-10-28T21:24:03Z
dc.date.available2021-10-28T21:24:03Z
dc.date.issued2020
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35066
dc.sourceIIOimport
dc.titleModeling and demonstration of oxygen vacancy-based RRAM as probabilistic device for sequence learning
dc.typeJournal article
dc.contributor.imecauthorDoevenspeck, Jonas
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorDebacker, Peter
dc.contributor.imecauthorVerkest, Diederik
dc.contributor.imecauthorLauwereins, Rudy
dc.contributor.imecauthorDehaene, Wim
dc.contributor.orcidimecDebacker, Peter::0000-0003-3825-5554
dc.contributor.orcidimecVerkest, Diederik::0000-0001-6567-2746
dc.contributor.orcidimecLauwereins, Rudy::0000-0002-3861-0168
dc.source.peerreviewyes
dc.source.beginpage505
dc.source.endpage511
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue2
dc.source.volume67
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8946878
imec.availabilityPublished - imec


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