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A MOS capacitor model for ultra-thin 2D semiconductors: the impact of interface defects and channel resistance

dc.contributor.authorGaur, Abhinav
dc.contributor.authorAgarwal, Tarun
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorRadu, Iuliana
dc.contributor.authorHeyns, Marc
dc.contributor.authorLin, Dennis
dc.date.accessioned2021-10-28T21:52:15Z
dc.date.available2021-10-28T21:52:15Z
dc.date.issued2020
dc.identifier.issn2053-1583
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35158
dc.sourceIIOimport
dc.titleA MOS capacitor model for ultra-thin 2D semiconductors: the impact of interface defects and channel resistance
dc.typeJournal article
dc.contributor.imecauthorGaur, Abhinav
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorLin, Dennis
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.source.peerreviewyes
dc.source.beginpage35018
dc.source.journal2D Materials
dc.source.issue3
dc.source.volume7
dc.identifier.urlhttps://doi.org/10.1088/2053-1583/ab7cac
imec.availabilityPublished - imec


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