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Relation between stress-induced leakage current and time-dependent dielectric breakdown in ultra-thin gate oxides

dc.contributor.authorHoussa, Michel
dc.contributor.authorMertens, Paul
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-06T11:23:08Z
dc.date.available2021-10-06T11:23:08Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3521
dc.sourceIIOimport
dc.titleRelation between stress-induced leakage current and time-dependent dielectric breakdown in ultra-thin gate oxides
dc.typeJournal article
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage892
dc.source.endpage896
dc.source.journalSemiconductor Science and Technology
dc.source.issue10
dc.source.volume14
imec.availabilityPublished - open access


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