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Characterization and modeling of hot carrier degradation in N-channel gate-all-around nanowire FETs

dc.contributor.authorGupta, Charu
dc.contributor.authorGupta, Anshul
dc.contributor.authorTuli, Shikhar
dc.contributor.authorBury, Erik
dc.contributor.authorParvais, Bertrand
dc.contributor.authorDixit, Abhisek
dc.date.accessioned2021-10-28T22:14:33Z
dc.date.available2021-10-28T22:14:33Z
dc.date.issued2020
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35220
dc.sourceIIOimport
dc.titleCharacterization and modeling of hot carrier degradation in N-channel gate-all-around nanowire FETs
dc.typeJournal article
dc.contributor.imecauthorGupta, Anshul
dc.contributor.imecauthorBury, Erik
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.orcidimecBury, Erik::0000-0002-5847-3949
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.source.peerreviewyes
dc.source.beginpage4
dc.source.endpage10
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue1
dc.source.volume67
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8930596
imec.availabilityPublished - imec


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