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Mixed hot-carrier/bias temperature instability degradation regimes in full {VG, VD} bias space: implications and peculiarities

dc.contributor.authorJech, Markus
dc.contributor.authorRott, Gunnar
dc.contributor.authorReisinger, Hans
dc.contributor.authorTyaginov, Stanislav
dc.contributor.authorRzepa, Gerhard
dc.contributor.authorGrill, Alexander
dc.contributor.authorJabs, Dominic
dc.contributor.authorJungemann, Christoph
dc.contributor.authorWaltl, Michael
dc.contributor.authorGrasser, Tibor
dc.date.accessioned2021-10-28T22:55:39Z
dc.date.available2021-10-28T22:55:39Z
dc.date.issued2020
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35329
dc.sourceIIOimport
dc.titleMixed hot-carrier/bias temperature instability degradation regimes in full {VG, VD} bias space: implications and peculiarities
dc.typeJournal article
dc.contributor.imecauthorTyaginov, Stanislav
dc.contributor.imecauthorGrill, Alexander
dc.contributor.orcidimecGrill, Alexander::0000-0003-1615-1033
dc.source.peerreviewyes
dc.source.beginpage3315
dc.source.endpage3322
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue8
dc.source.volume67
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9123546
imec.availabilityPublished - imec


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