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A demonstration of donor passivation through direct formation of V-Asx complexes in GexSn1-x

dc.contributor.authorKhanam, Afrina
dc.contributor.authorVohra, Anurag
dc.contributor.authorSlotte, Jonatan
dc.contributor.authorMakkonen, Ilja
dc.contributor.authorLoo, Roger
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-28T23:17:05Z
dc.date.available2021-10-28T23:17:05Z
dc.date.issued2020-05
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35382
dc.sourceIIOimport
dc.titleA demonstration of donor passivation through direct formation of V-Asx complexes in GexSn1-x
dc.typeJournal article
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.source.peerreviewyes
dc.source.beginpage195703
dc.source.journalJournal of Applied Physics
dc.source.issue19
dc.source.volume127
dc.identifier.urlhttps://doi.org/10.1063/5.0003999
imec.availabilityPublished - imec


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