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dc.contributor.authorKim, Young-Chang
dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorConard, Thierry
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorVanhaelemeersch, Serge
dc.date.accessioned2021-10-06T11:29:59Z
dc.date.available2021-10-06T11:29:59Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3555
dc.sourceIIOimport
dc.titleCharacterization of the post dry-etch cleaning of silicon for Ti-self-aligned silicide technology
dc.typeJournal article
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorVanhaelemeersch, Serge
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.source.peerreviewno
dc.source.beginpage1549
dc.source.endpage1556
dc.source.journalJ. Electrochem. Soc.
dc.source.issue4
dc.source.volume146
imec.availabilityPublished - imec


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