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Use of bilayer gate insulator in GaN-on-Si vertical trench MOSFETs: Impact on performance and reliability

dc.contributor.authorMukherjee, Kalparupa
dc.contributor.authorDe Santi, Carlo
dc.contributor.authorBorga, Matteo
dc.contributor.authorYou, Shuzhen
dc.contributor.authorGeens, Karen
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.contributor.authorMeneghini, Matteo
dc.date.accessioned2021-10-29T01:08:37Z
dc.date.available2021-10-29T01:08:37Z
dc.date.issued2020
dc.identifier.issn1996-1944
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35622
dc.sourceIIOimport
dc.titleUse of bilayer gate insulator in GaN-on-Si vertical trench MOSFETs: Impact on performance and reliability
dc.typeJournal article
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage4740
dc.source.journalMaterials
dc.source.issue21
dc.source.volume13
dc.identifier.urlhttps://www.mdpi.com/1996-1944/13/21/4740
imec.availabilityPublished - imec


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