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Low-frequency noise in vertically stacked Si n-channel nanosheet FETs

dc.contributor.authorOliveira, Alberto
dc.contributor.authorVeloso, Anabela
dc.contributor.authorClaeys, Co
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-29T01:32:47Z
dc.date.available2021-10-29T01:32:47Z
dc.date.issued2020
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35670
dc.sourceIIOimport
dc.titleLow-frequency noise in vertically stacked Si n-channel nanosheet FETs
dc.typeJournal article
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage317
dc.source.endpage320
dc.source.journalIEEE Electron Device Letters
dc.source.issue3
dc.source.volume41
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8963943
imec.availabilityPublished - imec


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