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Using the octagonal layout style for MOSFETs to boost the device matching in ionizing radiation environments

dc.contributor.authorPeruzzi, V.V.
dc.contributor.authorCruz, W.S.
dc.contributor.authorda Silva, G.A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, C.
dc.contributor.authorGimenez, S.P.
dc.date.accessioned2021-10-29T02:07:05Z
dc.date.available2021-10-29T02:07:05Z
dc.date.issued2020
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35733
dc.sourceIIOimport
dc.titleUsing the octagonal layout style for MOSFETs to boost the device matching in ionizing radiation environments
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage754
dc.source.endpage759
dc.source.journalIEEE Transactions on Device and Materials Reliability
dc.source.issue4
dc.source.volume20
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9239292
imec.availabilityPublished - imec


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