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Modeling and simulation of nonlinear electron-hole plasma in deep submicron n-MOSFET devices

dc.contributor.authorKrishnasamy, Rajendran
dc.contributor.authorGanesh, S. S.
dc.date.accessioned2021-10-06T11:33:53Z
dc.date.available2021-10-06T11:33:53Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3574
dc.sourceIIOimport
dc.titleModeling and simulation of nonlinear electron-hole plasma in deep submicron n-MOSFET devices
dc.typeJournal article
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage289
dc.source.endpage304
dc.source.journalJournal of Nonlinear Optical Physics and Materials
dc.source.issue2
dc.source.volume8
imec.availabilityPublished - open access


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